Therefore, plasma etchinganisotropy can be improved by increasing rf frequency or rf-bias power.
因此,等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
2
This paper reported a silicon micromachined gyroscope that is driven by the rotating carrier's angular velocity. The silicon chip was manufactured by anisotropyetching.
报道了一种利用旋转体自身角速度作为驱动力,通过各向异性刻蚀硅片制作的硅微机械陀螺。
3
Finally, by researching the mechanism of the anisotropyetching, the fabricating procedure of MOEMS optical switch array is designed.