The hopping conduction in energy gap of amorphous semiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other.
通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率，解释了非晶半导体中的低温带隙跳跃导电问题。
2
Some important parameters such as defect concentration induced by electron irradiation are calculated.
文中还计算了电子辐照在硅中所产生的缺陷浓度等一些重要参数。
3
The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR).