The occupation probability P1 of the wave function located around four nearest neighbour sites of the defectcenter has a peak exceeding 50%.
波函数在缺陷最近邻四个格点的占据几率P_1有一高达50％以上峰值。
2
The hopping conduction in energy gap of amorphous semiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defectcenter to the other.
通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率，解释了非晶半导体中的低温带隙跳跃导电问题。
3
The actual reason for a defect is often buried within technician comments or call center logs.