The influence of thermal annealing on DKDP crystals grown at different rates was studied.
分别对不同生长速度的DK DP 晶体进行了退火处理。
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The growth mechanism of DKDP crystal was described by the formation, diffusion and adsorption of growth unit of DKDP crystal. The method of increasing the growth rate was discussed.
The growing solution of DKDP crystal was synthesized firstly, then the source and possible introducing method of impurities were discussed by the measurement of metal ion impurity concentrations.