The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
2
The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.
采用宏观连续介质模型研究了极性半导体双势垒结构中界面光学声子模。
3
The at least one non-semiconductor monolayer may be positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.