The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectricisolation;
所述场效应晶体管包括:硅体,所述硅体的周边邻接介质绝缘物;
2
Combining the two processes, a compatible technology of SOI full dielectricisolation and complementary bipolar process is experimented. Vertical pup and npn transisto…
从实验的角度提出了一种SOI材料全介质隔离与高频互补双极工艺兼容的工艺途径。
3
It has been designed and constructed with the Intersil High Frequency Bipolar DielectricIsolation process and features dynamic parameters never before available from a truly differential device.