The drift drainresistance model is derived from the free carrier concentration analyzing in the drift region.
以单位面积下漂移区自由载流子浓度为基础,得出漂移区电阻的解析模型。
2
The result of calculation indicated that the attenuation of source-drain current caused by the source-drainresistance increased when temperature increased.
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.