The MOS model used includes short-channel effects, gate-source capacitance, gate-draincapacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
2
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gatecapacitance mainly plays a part of coupling.