With the consideration of the drainbias on the impact of TDDB, we have optimized the anti-fuse structure, which improve the programming speed and data storage reliability.
针对漏极偏置对经时击穿的影响,对反熔丝结构做了优化,提高了编程速度和数据存储的可靠性。
2
The drain side bias circuit provides a drain side bias.