定义 中文名称： 带隙态 英文名称： band gap state 定义： 在非晶态半导体带隙中，由于悬键等结构缺陷形成的电子态。 应用学科： 材料科学技术（一级学科）； 半导体材料（二级学科）；非晶和微晶半导体材料（二
双语例句
1
There are four surface state bands in the gap. Among them, two occupied surface state bands have been confirmed by valence band spectra of synchrotron radiation photoelectron spectroscopy.
在带隙附近存在四个表面态带，其中的两个占有表面态带已由价带的同步辐射光电子能谱实验得到证实。
2
The results show: 1. There emerges a new bound state in the gap caused by thee-e interation, that is a shallow discrete level near the top of the valence band.
结果发现：1。电子相互作用使能隙中出现了一个新的电子束缚态，它是靠近价带的浅能级；
3
The duration of bound-entangled state (non-distillable) is controlled by the resonant control laser and the detuning of the atomic frequency inside the gap with respect to the band-edge.