Ion beam etching (IBE) was applied to treat the as-polished surfaces of a CLBO crystal with varying in rotation speed of clamp, etching times and incidence angles.
In this paper, two precise methods are posed to measure the turning angles here. The local twist of the single crystal whiskers can be measured accurately in those methods.
本文提出了两种较精确的晶须扭转角度的测量方法，且所测的都是单晶晶须的局部扭变。
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According to ray-tracing formulas of crystal, calculated the critical angles of Nicol prism for incident ray in any direction. Achieves the polarization critical curves of Nicol prism.