The information carrier of traditional electronic components such as diode and audion, is electronic charge, but the electronic spin is not considered.
传统的电子元件，比如二极管和三极管，它们的信息载体都是电子电荷，电子的自旋没有被利用。
2
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
3
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).