The main process parameters include hydrogen content in the gas sources, hydrogen plasma catalyst pretreatment, substrate bias, deposition temperature and plasma flow guiding.
主要之制程参数包括气源中之氢气含量、电浆前处理、材偏压、积温度以及电浆导流板之施加。
2
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
3
The temperature dependence of exchange bias and coercivity of ferromagnetic layer and antiferromagnetic gain layer is discussed.