The hopping conduction in energy gap of amorphous semiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other.
通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率，解释了非晶半导体中的低温带隙跳跃导电问题。
2
Objective To analyze conduction the occurrence and prognosis of blockade after transcatheter closure of perimembranous ventricular septal defect(PMVSD).
目的分析经导管膜周部室间隔缺损（PMVSD）封堵术后传导阻滞发生及转归情况。
3
In the conventional vacuum insulation board, a fatal defect is that the place for holding a getter has the highest heat conduction coefficient.