It is found that there is a threshold energy density in laser doping, and distributions of dopant density and depth have relation to preheat temperature and plating layer thickness of the impurities.
激光掺杂存在一个阈值能量密度。掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关。
2
The method includes doping a silicon layer with a first type of dopantand performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer.
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. Get the number wrong, and things will not work properly.