The dopedsemiconductor line is coupled to a row of memory cells.
掺杂半导体线连接至一行存储单元。
2
Finally, the possibility for using dopedsemiconductor and nanometer material to achieve infrared and rada.
最后介绍了用掺杂半导体材料和纳米材料实现红外与雷达复合隐身的可能性。
3
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a dopedsemiconductor material.