The implanted dopant has a first dopantprofile in the silicon layer.
所注入的掺杂剂在硅层中具有第一掺杂剂分布。
2
Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法测量的外延层分布是实际载流子分布的一种较好的近似。
3
The results indicate that a hybrid profile of RI and dopant is the best choice for LMA fiber with coiling.