The invention discloses a method for preparing Ti-Si compound under microwave irradiation and dopantmaterial thereof.
本发明公布了微波辐照制备钛硅化合物及其掺杂材料的方法。
2
It could be possible to make superconductor-based circuits simply by using a beam of X-rays to control the positions of dopant atoms within a suitable material.
在合适的材料中，使用X射线来控制掺杂剂原子的状态，用这种方法将使制作超导电路成为可能。
3
For every dopant has its advantages and disadvantages, results of recent studies show that double-donor doping and donor-acceptor codoping can improve the performance of the material remarkably.