The close correlations between laser energy density, pulse duration, interaction time and junction depth, dopantdistribution as well as junction resistance are mainly emphasized in this paper.
着重强调了激光能量密度、脉冲宽度、作用时间等工艺参数与结深、杂质分布以及结电阻之间的密切关联。
2
The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.