Therefore the dopantconcentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法测量的外延层分布是实际载流子分布的一种较好的近似。
2
In addition, the absorption coefficients and the dopantconcentration doped of these samples weren't the same for X-ray excitation, therefore, their light emission efficiencies were also different.
这些样品本身对X射线的吸收系数及掺杂浓度不一样，因此它们的光发射效率也有所差别。
3
The concentration of dopant in the sample will be affected by the concentration of the dopant solution on the one hand and by the thickness of the film on the other.