Modification effect of hot filament gas discharge PIII was compared with that of radio-frequency (RF) glow discharge PIII.
分析比较了灯丝放电PIII和射频辉光放电PIII对基体表面进行氮离子注入后的改性效果。
2
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
3
Plasma in radio frequency (rf) glow discharge is widely used in the preparation of semiconductor film materials and microelectronic industry.