The invention discloses an etching stopping layer comprising a nitrogenous silicon carbide layer formed on a substrate and a silicon nitride layer formed on the silicon carbide layer.
A new method for testing the acid etching depth of WC-Co cemented carbide by flame atomic absorption spectrometry and glow discharge spectrometry has been studied.
研究了原子吸收光谱法和辉光放电光谱仪定量测定硬质合金去钴深度的新技术。
3
Characterization method of defects in silicon carbide by chemical etching and optimal process parameters are obtained.