The power dual basetransistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.
在重点考虑了提高击穿电压和增大电流容量的基础上,设计并研制出功率型dubat。
2
This flexing generates a negative potential at the feedback tab, which feeds back to the base of the transistor.
这个弯曲在反应标记上产生负电压,其反过来为晶体管的基极供电。
3
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.