Combining the two processes, a compatible technology of SOI full dielectric isolation and complementarybipolar process is experimented. Vertical pup and npn transisto…
从实验的角度提出了一种SOI材料全介质隔离与高频互补双极工艺兼容的工艺途径。
2
The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricate high-performance complementarybipolar circuits.
该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容，可用于制造高性能的互补双极电路。
3
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.