Provided is a complementarymetaloxidesemiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体(CMOS)装置及其制造方法。
2
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementarymetal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
3
A complementarymetaloxidesemiconductor (CMOS) readout integrated circuit (ROIC) for the sensitive material of vanadium dioxide (VO_2) was introduced.