The base region is always very much narrower than the emitter or collector regions .
基极总是比发射极和集电极薄得多。
2
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collectorregion including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
3
The best design method of high voltage and low saturation voltage GTR presented in this paper shows that the collectorregion through design is better than non-through design.