At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-basejunction.
模拟表明，在恒定的偏置电流下，沿集电结方向移动量子阱能显著提高光学带宽。
2
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。
3
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.