A discussion of the implications of the new SEMI standards for carrierrecombination measurements lifetime in silicon.
针对SEMI最新制订载子合复寿命量测标准的内含意义及讨论。
2
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrierrecombination rate and carrier diffusion velocity at low temperature.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
3
Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.