英语词汇carrier injection怎么读，是什么意思，单词翻译、读音、固定搭配用法和短语词组及例句-英汉双解词典

单词

carrier injection

释义

carrier injection

简明释义

[电子] 载流子注入

网络释义

1
?载子注入
... carrier architect 载波产生器 carrier injection 载子注入 carrier bang lumnescence 载流子打针发光 ...
2
?载体注入
... carrier free无载体的 carrier injection载体注入 carrier lifetime载体寿命 ...
3
[电子]?载流子注入
...利用硅的受激喇曼散射（Stimulated Raman Scattering）效应实现基于硅材料的发光n21，以及利用载流子注入（Carrier Injection）的方式来实现对光信号的调制『131。
4
?子注入
并且其激子约束能(exciton bond energy)为60 meV，因此很有可能在室温下利用载子注入(carrier injection)的方式得到强的高于能隙光激发茔光。

短语

1
hot-carrier injection
热载流子注入 ; 载流子注入 ; 热电子注入 ; 的热载流子注入
2
charge carrier injection
载劣注入 ; 载流注入
3
minority carrier injection
子注入 ; 少数载流子注入

双语例句

1
A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.
本文提出了一种新的多晶硅发射区少数载流子注入理论。
2
Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
3
Hot-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection conditions.
对三种典型的热载流子应力条件造成的器件退化进行实验。

随便看

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单词	carrier injection
释义	carrier injection 简明释义 [电子] 载流子注入网络释义 1 ?载子注入 ... carrier architect 载波产生器 carrier injection 载子注入 carrier bang lumnescence 载流子打针发光 ... 2 ?载体注入 ... carrier free无载体的 carrier injection载体注入 carrier lifetime载体寿命 ... 3 [电子]?载流子注入 ...利用硅的受激喇曼散射（Stimulated Raman Scattering）效应实现基于硅材料的发光n21，以及利用载流子注入（Carrier Injection）的方式来实现对光信号的调制『131。 4 ?子注入并且其激子约束能(exciton bond energy)为60 meV，因此很有可能在室温下利用载子注入(carrier injection)的方式得到强的高于能隙光激发茔光。短语 1 hot-carrier injection 热载流子注入 ; 载流子注入 ; 热电子注入 ; 的热载流子注入 2 charge carrier injection 载劣注入 ; 载流注入 3 minority carrier injection 子注入 ; 少数载流子注入双语例句 1 A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper. 本文提出了一种新的多晶硅发射区少数载流子注入理论。 2 Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique. 本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。 3 Hot-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection conditions. 对三种典型的热载流子应力条件造成的器件退化进行实验。
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