英语词汇carrier diffusion怎么读，是什么意思，单词翻译、读音、固定搭配用法和短语词组及例句-英汉双解词典

单词

carrier diffusion

释义

carrier diffusion

简明释义

[电子] 载流子扩散

网络释义

1
?流子漫射
... carrier confinement 载波制约 carrier diffusion 流子漫射 carrier displacement 载体置换法 ...
2
[电子]?载流子扩散
... 载流子平均漂移速度，载流子迁移率：carrier mobility 载流子扩散：carrier diffusion 载流子空间电荷：carrier space charge ...
3
?载子扩散
载子飘移(carrier drift) 载子扩散(carrier diffusion) 产生与复合过程generation and recombination process) ..

短语

1
charge carrier diffusion
载劣扩散 ; 载流扩散
2
minority carrier diffusion length
少数载流子扩散长度
3
carrier-diffusion system
载体

双语例句

1
It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.
结果表明，当注入水平较高时，少子扩散长度的测量值变长。
2
Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles.
以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。
3
The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.
本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；

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单词	carrier diffusion
释义	carrier diffusion 简明释义 [电子] 载流子扩散网络释义 1 ?流子漫射 ... carrier confinement 载波制约 carrier diffusion 流子漫射 carrier displacement 载体置换法 ... 2 [电子]?载流子扩散 ... 载流子平均漂移速度，载流子迁移率：carrier mobility 载流子扩散：carrier diffusion 载流子空间电荷：carrier space charge ... 3 ?载子扩散载子飘移(carrier drift) 载子扩散(carrier diffusion) 产生与复合过程generation and recombination process) .. 短语 1 charge carrier diffusion 载劣扩散 ; 载流扩散 2 minority carrier diffusion length 少数载流子扩散长度 3 carrier-diffusion system 载体双语例句 1 It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high. 结果表明，当注入水平较高时，少子扩散长度的测量值变长。 2 Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles. 以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。 3 The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers. 本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；
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