The electron spin dependent tunneling and susceptibility are studied.
研究了电子的自旋相关的隧穿和极化。
2
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electrontunneling were described with single electron transistor(SET) as the research object.
以单电子晶体管为研究对象,系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
3
The gate current is produced by the tunneling, the electron surmounting and percolation.