DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturationeffect is considered.
本文首先建立了一个SOI MOSFET器件的直流漏电流模型和阈值电压模型,模型考虑了速度饱和效应。
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On the grounds of the pinch-off voltage, the cut-off point of variable resistance area and saturation area can be fixed, so the field effect tube can reliably work in the saturation area.