The conditions of forming tungstensilicide with As ion beam mixing have been studied by means of Rutherford backscattering.
本工作用卢瑟福背散射研究了离子束混合方法形成硅化钨的条件。
2
In particular, when the refractory metal silicide film is a tungstensilicide film, the concentration of cu is preferable that it is in the range of 0.1 to 1.0 wt. %.