The model considers the drift velocitysaturation of carriers and influence of parasitic bipolar transistor.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
2
In addition, this model is involved in the velocitysaturation effect, mobility degradation effect and channel length modulation effect.
模型中同时考虑了速度饱和效应、迁移率下降效应和沟道长度调制效应等。
3
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocitysaturation effect is considered.