The off-state breakdowncharacteristics of these devices are presented.
对这些器件的关态击穿特性进行了研究。
2
A method to improve the secondary breakdowncharacteristics of transistors is introduced in the paper, and theoretical discussion is also given.
本文介绍了一种提高晶体管二次击穿耐量的方法，并从理论上作了探讨。
3
Then, the breakdowncharacteristics and the de-pendence of discharge current density on time are theoretically calculated in this kind of AC silent discharge.