The dependence of etching rate and profile on the vacuum pressure, RF pow-er, gas composition and flow rate, and electrode temperature is analyzed.
分析了真空压力、射频功率、气体组合及其流量和电极温度对刻蚀速率、刻蚀剖面的影响;
3
The simulation results provide a theoretic guide for the fabrication of metallic nano-hole array by PS sphere's etching and vacuum depositing technology.