Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.
重点研究了退化PMOS器件的高场退火效应和氧化层陷阱电子的退陷阱机制。
2
Substituting the electric field distributions into the formula we ve induced, we got the trapped charge distribution inside the buried oxide during total irradiation under different bias states.