This paper reports the light emission from MIM tunnel diode and Negative Differential Resistance (NDR) in its I-Vcharacteristic curve.
本文报道了MIM隧道二极管的发光和负阻现象,用梯形势垒计算了电流-电压特性。
2
We present a novel method, used to build the I-Vcharacteristic equations of the MOSTs in the deep sub-micron circuits.
提供了一种新的方法,用于建立深亚微米电路中MOST的伏安特性方程。
3
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.