The designed SOI nanowire AWGs were fabricated using ultravioletlithography and induced coupler plasma etching.
通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
2
The results of electronic microscope scanning of sub-micrometer patterns by far ultravioletlithography are given.
并给出远紫外光刻亚微米级图形的电镜扫描照片结果。
3
All-reflective optical systems, due to their material absorption and low refractive index, are used to create the most suitable devices in extreme ultravioletlithography (EUVL).