A computer simulation of the transientradiation effect on bipolar integrated circuits is described in this article.
本文介绍了利用计算机模拟双极型集成电路的瞬时辐照效应。
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In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transientradiation environment.
Finally, transient temperature distributing is simulated. thermo - soakback phenomena, electrical heating efficiency of catalyst bed and outer space radiation are analyzed.