At the same time, corresponding pressure transient curves are drawn. The curve characteristics and influences are analyzed.
同时绘制了相应的压力动态曲线,并对曲线的特征和影响因素进行了分析。
2
From the Ct transientcurve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined.
根据扫描所得的电容-时间瞬态曲线,可确定样品中少于产生寿命。
3
By means of speeding up the aging of the EIP and transient pulse test, the temperature-rising curve of EIP, the variation of the ignition pressure and 50% ignition point are obtained.