Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
The finite deformation theory and the Nakai's sub-loading constitutive model are used to investigate shear band localization in plane strain model tests.
基于有限变形理论和中井的下负荷面本构关系模型，研究了平面应变试验中黏土试样变形的局部化问题。
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The last part is system debug among which includes sub-module test and the overall tests.