Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
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Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.