The gate source breakdown performance of staticinductiontransistor was studied experimentally.
对静电感应器件的栅源击穿特性做了实验研究。
2
Methods for improving the high current performance of staticinductiontransistor (SIT) are presented.
描述了改善静电感应晶体管（SIT）大电流特性的新方法。
3
In order to comprehend schottky gate of organic staticinductiontransistor, chapter two expatiates characteristics of PN junction and schottky junction.