The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。
2
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.