So the problem is coming that SiO gaseous unstable matter is made in the interface of silicon and silicon dioxide due to silicon and oxygen incomplete reaction when making thermaloxidelayer.
The first important thin film from the thermaloxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层,在它之下,源和漏之间就能形成导电通道。
3
It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layeroxide deposition by LPCVD.