Using X-ray diffraction technique, the process of the crystal growth of metal ultrafine particles, which are prepared by sputtering method and deposited on the silica! Substrate, have been researched.

Disclosed is a sputtering film-forming apparatus which is capable of forming a metal compound film with good characteristics at higher film-forming rate by a simple process at low cost.

The evaluating method of sputtering cleanout effect on metal target surface by volt-ampere characteristic of target cathode has been given, which provides effective approach to eliminate...