The measurement of stress change inthinfilm by Substrate Curvature method is introduced in this paper.
有关薄膜应力的一般测量方法存在精度不高和不能实时测量的缺点。
2
Two-dimensional finite element modeling was used to simulate the thermal stressin unpassivated and passivated aluminum thinfilm interconnects.
对有钝化层与无钝化层的铝互连线的热应力进行了数值模拟，并建立起互连线的二维有限元模型。
3
In order to meet the requirements of optical, electronic and mechanical performance of semiconductor products, it is necessary to measure thinfilmstress during the deposition.