A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.

Sedimentary speed: unit time parts deposition on the surface of the metal thickness.

Electroplating: use the principle of electrolysis, the metal and alloy parts deposition in the surface, form even, density, good adhesion of the metal layer process.