The measured undestructivly theory for the surfaceenergylevel and the surface state density of semiconductors fay the method of photovoltages at changed temperatures is reported.
本文报道了应用变温光伏方法对半导体表面能级,表面态密度的非破坏性测量原理。
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When a photon strikes the surface, it excites an electron to a higher energylevel, which is specific to the material.